4n29m, 4n30m, 4N32M, 4n33m, h11b1m, til113m ?general purpose 6-pin photodarlington optocoupler ?007 fairchild semiconductor corporation www.fairchildsemi.com 4nxxm, h11b1m, til113m rev. 1.0.3 september 2009 4n29m, 4n30m, 4N32M, 4n33m, h11b1m, til113m general purpose 6-pin photodarlington optocoupler features high sensitivity to low input drive current meets or exceeds all jedec registered speci?ations ul, c-ul approved, file #e90700, volume 2 iec 60747-5-2 approved (ordering option v) applications low power logic circuits t elecommunications equipment po r table electronics solid state relays interfacing coupling systems of different potentials and impedances description the 4n29m, 4n30m, 4N32M, 4n33m, h11b1m and til113m have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. schematic emitter collector 1 2 3 anode cathode 4 5 6 base n/c 6 1 6 6 1 1
?007 fairchild semiconductor corporation www.fairchildsemi.com 4nxxm, h11b1m, til113m rev. 1.0.3 2 4n29m, 4n30m, 4N32M, 4n33m, h11b1m, til113m ?general purpose 6-pin photodarlington optocoupler absolute maximum ratings (t a = 25? unless otherwise speci?d.) stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. in addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolu te maximum ratings are stress ratings only. symbol parameter value units tot al device t stg storage temperature -50 to +150 ? t opr operating temperature -40 to +100 ? t sol lead solder temperature (wave) 260 for 10 sec ? p d t otal device power dissipation @ t a = 25? 250 mw derate above 25? 3.3 mw/? emitter i f continuous forward current 80 ma v r reverse voltage 3 v i f (pk) forward current ?peak (300?, 2% duty cycle) 3.0 a p d led power dissipation @ t a = 25? 150 mw derate above 25? 2.0 mw/? detector bv ceo collector-emitter breakdown voltage 30 v bv cbo collector-base breakdown voltage 30 v bv eco emitter-collector breakdown voltage 5 v p d detector power dissipation @ t a = 25? 150 mw derate above 25? 2.0 mw/? i c continuous collector current 150 ma
?007 fairchild semiconductor corporation www.fairchildsemi.com 4nxxm, h11b1m, til113m rev. 1.0.3 3 4n29m, 4n30m, 4N32M, 4n33m, h11b1m, til113m ?general purpose 6-pin photodarlington optocoupler electrical characteristics (t a = 25? unless otherwise speci?d.) individual component characteristics t ransfer characteristics symbol parameter test conditions device min. typ. max. unit emitter v f input forward voltage* i f = 10ma 4nxxm 1.2 1.5 v h11b1m, til113m 0.8 1.2 1.5 i r reverse leakage current* v r = 3.0v 4nxxm 0.001 100 ? v r = 6.0v h11b1m, til113m 0.001 10 c capacitance* v f = 0v, f = 1.0mhz all 150 pf detector bv ceo collector-emitter breakdown voltage* i c = 1.0ma, i b = 0 4nxxm, til113m 30 60 v h11b1m 25 60 bv cbo collector-base breakdown voltage* i c = 100?, i e = 0 all 30 100 v bv eco emitter-collector breakdown voltage* i e = 100?, i b = 0 4nxxm 5.0 10 v h11b1m, til113m 710 i ceo collector-emitter dark current* v ce = 10v, base open all 1 100 na symbol parameter test conditions device min. typ. max. unit dc characteristics i c(ctr) collector output current* (1, 2) i f = 10ma, v ce = 10v, i b = 0 4N32M, 4n33m 50 (500) ma (%) 4n29m, 4n30m 10 (100) i f = 1ma, v ce = 5v h11b1m 5 (500) i f = 10ma, v ce = 1v til113m 30 (300) v ce(sat) saturation voltage* (2) i f = 8ma, i c = 2.0ma 4nxxm 1.0 v til113m 1.25 i f = 1ma, i c = 1ma h11b1m 1.0 ac characteristics t on tu r n-on time i f = 200ma, i c = 50ma, v cc = 10v, r l = 100 ? 4nxxm, til113m 5.0 ? i f = 10ma, v ce = 10v, r l = 100 ? h11b1m 25 t off tu r n-off time i f = 200ma, i c = 50ma, v cc = 10v, r l = 100 ? 4N32M, 4n33m, til113m 100 ? 4n29m, 4n30m 40 i f = 10ma, v ce = 10v, r l = 100 ? h11b1m 18 bw bandwidth (3, 4) 30 khz
?007 fairchild semiconductor corporation www.fairchildsemi.com 4nxxm, h11b1m, til113m rev. 1.0.3 4 4n29m, 4n30m, 4N32M, 4n33m, h11b1m, til113m ?general purpose 6-pin photodarlington optocoupler electrical characteristics (t a = 25? unless otherwise speci?d.) (continued) isolation characteristics * indicates jedec registered data. notes: 1. the current transfer ratio(i c /i f ) is the ratio of the detector collector current to the led input current. 2. pulse test: pulse width = 300?, duty cycle 2.0% . 3. i f adjusted to i c = 2.0ma and i c = 0.7ma rms. 4. the frequency at which i c is 3db down from the 1khz value. 5. for this test, led pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common. safety and insulation ratings as per iec 60747-5-2, this optocoupler is suitable for ?afe electrical insulation?only within the safety limit data. compliance with the safety ratings shall be ensured by means of protective circuits. symbol characteristic test conditions device min. typ. max. units v iso input-output isolation voltage (5) f = 60hz, t = 1 sec. all 7500 v ac peak vdc 4N32M* 2500 v vdc 4n33m* 1500 r iso isolation resistance (5) v i-o = 500vdc all 10 11 ? c iso isolation capacitance (5) v i-o = , f = 1mhz all 0.8 pf symbol parameter min. typ. max. unit installation classi?ations per din vde 0110/1.89 ta b le 1 f or rated main voltage < 150vrms i-iv f or rated main voltage < 300vrms i-iv climatic classi?ation 55/100/21 p ollution degree (din vde 0110/1.89) 2 cti comparative tracking index 175 v pr input to output test voltage, method b, v iorm x 1.875 = v pr , 100% production test with tm = 1 sec, partial discharge < 5pc 1594 v peak input to output test voltage, method a, v iorm x 1.5 = v pr , type and sample test with tm = 60 sec, partial discharge < 5pc 1275 v peak v iorm max. working insulation voltage 850 v peak v iotm highest allowable over voltage 6000 v peak external creepage 7 mm external clearance 7 mm insulation thickness 0.5 mm rio insulation resistance at ts, v io = 500v 10 9 ?
?007 fairchild semiconductor corporation www.fairchildsemi.com 4nxxm, h11b1m, til113m rev. 1.0.3 5 4n29m, 4n30m, 4N32M, 4n33m, h11b1m, til113m ?general purpose 6-pin photodarlington optocoupler t ypical performance curves fig. 2 normalized ctr vs. forward current i f - forward current (ma) 0246810121 4161820 normalized ctr 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ce = 5.0v t a = 25 c normalized to i f = 10 ma fig. 3 normalized ctr vs. ambient temperature t a - ambient temperature ( c) -60 -40 -20 0 20 40 60 80 100 normalized ctr 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i f = 5 ma i f = 10 ma i f = 20 ma normalized to i f = 10 ma t a = 25 c i f - led forward current (ma) v f - forward voltage (v) fig. 1 led forward voltage vs. forward current 110 100 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 t a = 25 c t a = -55 c t a = 100 c fig. 5 ctr vs. rbe (saturated) r be - base resistance (k ?) normalized ctr ( ctr rbe / ctr rbe(open) ) 10 100 1000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 i f = 20 ma i f = 10 ma i f = 5 ma v ce = 0.3 v fig. 4 ctr vs. rbe (unsaturated) r be - base resistance (k ?) normalized ctr ( ctr rbe / ctr rbe(open) ) 10 100 1000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v ce = 5.0 v i f = 20 ma i f = 10 ma i f = 5 ma 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 i f = 5 ma i f = 20 ma i f = 10 ma fig. 6 collector-emitter saturation voltage vs. collector current i c - collector current (ma) v ce (sat) - collector-emitter saturation voltage (v) i f = 2.5 ma t a = 25 ?c
?007 fairchild semiconductor corporation www.fairchildsemi.com 4nxxm, h11b1m, til113m rev. 1.0.3 6 4n29m, 4n30m, 4N32M, 4n33m, h11b1m, til113m ?general purpose 6-pin photodarlington optocoupler t ypical performance curves (continued) normalized t on - (t on(r be ) / t on(open ) ) fig. 8 normalized t on vs. r be r be - base resistance (k ?) 10 100 1000 10000 100000 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v cc = 10 v i c = 2 ma r l = 100 ? switching speed - ( s) fig. 7 switching speed vs. load resistor r-load resistor (k ?) 0.1 1 10 100 0.1 1 10 100 1000 t off i f = 10 ma v cc = 10 v t a = 25 c t r t on t f 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 v cc = 10 v i c = 2 ma r l = 100 ? normalized t off - (t off(r be ) / t off(open) ) 10 100 1000 10000 100000 r be - base resistance (k ?) fig. 9 normalized t off vs. r be fig. 10 dark current vs. ambient temperature t a - ambient temperature ( c) 020406 080 100 i ceo - collector -emit ter dark current (na) 0.001 0.01 0.1 1 10 100 1000 10000 v ce = 10 v t a = 25 c output pulse input pulse test circuit wave forms t r t f input i f r l r be v cc = 10v output t on 10% 90% t off figure 11. switching time test circuit and waveforms i c adjust i f to produce i c = 2 ma
?007 fairchild semiconductor corporation www.fairchildsemi.com 4nxxm, h11b1m, til113m rev. 1.0.3 7 4n29m, 4n30m, 4N32M, 4n33m, h11b1m, til113m ?general purpose 6-pin photodarlington optocoupler package dimensions 8.13?.89 6.10?.60 pin 1 64 13 0.25?.36 5.08 (max.) 3.28?.53 0.38 (min.) 2.54?.81 2.54 (bsc) (0.86) 0.41?.51 1.02?.78 0.76?.14 8.13?.89 6.10?.60 pin 1 64 13 0.25?.36 5.08 (max.) 3.28?.53 0.38 (min.) 2.54?.81 2.54 (bsc) (0.86) 0.41?.51 1.02?.78 0.76?.14 7.62 (typ.) 15?(typ.) 0.20?.30 0.20?.30 10.16?0.80 through hole 0.4" lead spacing surface mount rcommended pad layout (1.78) (2.54) (1.52) (7.49) (10.54) (0.76) 8.13?.89 note: all dimensions in mm. 6.10?.60 8.43?.90 pin 1 64 13 0.25?.36 2.54 (bsc) (0.86) 0.41?.51 1.02?.78 0.76?.14 0.38 (min.) 3.28?.53 5.08 (max.) 0.20?.30 0.16?.88 (8.13)
?007 fairchild semiconductor corporation www.fairchildsemi.com 4nxxm, h11b1m, til113m rev. 1.0.3 8 4n29m, 4n30m, 4N32M, 4n33m, h11b1m, til113m ?general purpose 6-pin photodarlington optocoupler ordering information marking information suf? example option no suf? 4N32M standard through hole device (50 units per tube) s 4n32sm surface mount lead bend sr2 4n32sr2m surface mount; tape and reel (1,000 units per reel) t 4n32tm 0.4" lead spacing v 4n32vm vde 0884 tv 4n32tvm vde 0884, 0.4" lead spacing sv 4n32svm vde 0884, surface mount sr2v 4n32sr2vm vde 0884, surface mount, tape & reel (1,000 units per reel) 4n29 v x yy q 1 2 6 4 3 5 de?itions 1f airchild logo 2d e vice number 3 vde mark (note: only appears on parts ordered with vde option ?see order entry table) 4 one digit year code, e.g., ? 5t wo digit work week ranging from ?1 to ?3 6 assembly package code
?007 fairchild semiconductor corporation www.fairchildsemi.com 4nxxm, h11b1m, til113m rev. 1.0.3 9 4n29m, 4n30m, 4N32M, 4n33m, h11b1m, til113m ?general purpose 6-pin photodarlington optocoupler t ape dimensions note: all dimensions are in millimeters. re?w soldering pro?e 4.0 0.1 1.5 min user direction of feed 2.0 0.05 1.75 0.10 11.5 1.0 24.0 0.3 12.0 0.1 0.30 0.05 21.0 0.1 4.5 0.20 0.1 max 10.1 0.20 9.1 0.20 1.5 0.1/-0 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 c time (s) 0 60 180 120 270 260 c >245 c = 42 sec time above 183 c = 90 sec 360 1.822 c/sec ramp up rate 33 sec
?007 fairchild semiconductor corporation www.fairchildsemi.com 4nxxm, h11b1m, til113m rev. 1.0.3 10 tradem arks th e following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its global subsidiaries ,and is not in tended to be an exhaustive list of all such trademarks. auto-spm build it now coreplus corepower crossvolt ctl current transfer logic ecospark e fficentmax ezswitch * * fair child fairchild semiconductor fa ct quiet series fact f ast fa stvcore fetbench flashwriter * fps f-pfs frfet global power resource sm green fps green fps e-series g max gto in tellimax isoplanar me gabuck mi crocoupler microfet mi cropak m illerdrive moti onmax mo tion-spm optologic op toplanar pdp spm powe r-spm po we rtrench powerxs pr ogrammable active droop qfet qs quiet series r apidconfigure saving our world, 1mw/w/kw at a time sm artmax smart start spm stealth s uperfet sup ersot -3 s upersot -6 s upersot -8 s upremos syncfet sy nc-lock * th ep ower franchise ti nyboost tinybuck ti nylogic tinyopto tinypower tinypwm tinywire trifault detect t ruecurrent * serdes uhc ultra frfet unifet vcx vi sualmax xs *t rademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fa i rchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild? 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